tm september 2006 fdma420nz single n-channel 2. 5v specified powertrench ? mosfet ?2006 fairchild semiconductor corporation fdma420nz rev b1 www.fairchildsemi.com 1 fdma420nz single n-channel 2.5v specified powertrench ? mosfet 20v, 5.7a, 30 m ? general description this single n-channel mosfet has been designed using fairchild semiconductor?s advanced power trench process to optimize the r ds (on) @v gs =2.5v on special microfet leadframe. applications ? li-lon battery pack features ? r ds(on) = 30m ? @ v gs = 4.5 v, i d = 5.7a ? r ds(on) = 40m ? @ v gs = 2.5 v, i d = 5.0a ? low profile-0.8mm maximum-in the new package microfet 2x2 mm ? rohs compliant absolute maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 12 v i d drain current -continuous (note 1a) -pulsed 5.7 a 24 p d power dissipation (steady state) (note 1a) (note 1b) 0.9 w 2.4 t j , t stg operating and storage junction temperature range -55 to +150 o c r ja thermal resistance, junction-to-ambient (note 1a) 145 o c/w r ja thermal resistance, junction-to-ambient (note 1b) 52 device marking device reel size tape width quantity 420 fdma420nz 7? 12mm 3000 units d d s g d d pin 1 drain source 5 1 6 2 3 4 d d s d d g bottom drain contact microfet bottom view 2x2
fdma420nz single n-channel 2. 5v specified powertrench ? mosfet fdma420nz rev b1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain-source breakdown voltage v gs = 0v , i d = 250 p a 20 v ' b vdss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 12 mv/ c i dss zero gate voltage drain current v ds = 16v, v gs = 0v, 1 p a i gss gate-body leakage v gs = r 12v, v ds = 0v r 10 p a on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 p a 0.6 0.83 1.5 v ' v gs(th) ' t j gate threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -3.1 mv/ c r ds(on) static drain-source on-resistance v gs = 4.5v, i d = 5.7a 16.8 30 m : v gs = 4.0v, i d = 5.7a 17.3 31 v gs = 3.1v, i d = 5.0a 18.9 33 v gs = 2.5v, i d = 5.0a 21.2 40 v gs = 4.5v, i d = 5.7a, t j =150c 24.8 44 g fs forward transconductance v ds = 5v, i d = 5.7a 28.3 s (note 2) dynamic characteristics c iss input capacitance v ds = 10v, v gs = 0v, f = 1.0mhz 701 935 pf c oss output capacitance 163 220 pf c rss reverse transfer capacitance 125 190 pf r g gate resistance f = 1.0mhz 1.92 : switching characteristics (note 2) t d(on) turn-on delay time v dd = 10v, i d = 1a v gs = 4.5v, r gen = 6 : 9.8 20 ns t r turn-on rise time 8.6 18 ns t d(off) turn-off delay time 21.5 43 ns t f turn-off fall time 8.6 18 ns q g total gate charge v ds = 10v, i d = 5.7a, v gs = 4.5v 8.8 12 nc q gs gate-source charge 0.9 2 nc q gd gate-drain charge 2.4 4 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 2.0 a v sd drain-source diode forward voltage v gs = 0v, i s = 2.0a 0.69 1.2 v t rr diode reverse recovery time i f = 5.7a, di/dt = 100a/ p s 20 ns q rr diode reverse recovery charge 5 nc notes: 1. r t ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. a. b .
fdma420nz single n-channel 2. 5v specified powertrench ? mosfet fdma420nz rev b1 www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 5 10 15 20 25 30 35 40 45 50 v gs = 4.5v v gs = 3.5v v gs = 2.5v v gs = 2.0v v gs = 1.5v v gs = 3.0v pulse duration = 300 p s duty cycle = 2.0%max i d , drain current (a) v ds , drain-source voltage (v) on region characteristics figure 2. 10 20 30 40 50 0.9 1.2 1.5 1.8 2.1 v gs = 4.5v v gs = 3.5v v gs = 3.0v v gs = 2.5v v gs = 2.0v pulse duration = 300 p s duty cycle = 2.0%max normalized drain to source on-resistance i d , drain current(a) on-resistance vs drain current and gate voltage figure 3. -80 -40 0 40 80 120 160 0.6 0.8 1.0 1.2 1.4 1.6 t j , junction temperature ( o c ) normalized drain to source on-resistance i d = 5.7a v gs = 4.5v normalized on resistance vs junction temperature figure 4. 12345 10 20 30 40 50 60 i d = 2.8a t j = 25 o c t j = 125 o c pulse duration = 300 p s duty cycle = 2.0%max v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) on-resistance vs ga te to source votlage figure 5. 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 t j = -55 o c t j = 25 o c t j = 125 o c pulse duration = 300 p s duty cycle = 2.0%max i d , drain current (a) v gs , gate to source voltage (v) v ds = 5v transfer characteristics figure 6. 0.20.40.60.81.01.21.4 1e-4 1e-3 0.01 0.1 1 10 100 t j = 125 o c t j = -55 o c t j = 25 o c v gs = 0v v sd , body diode forward voltage (v) i s , reverse drain current (a) source to drain diode forward voltage vs source current
fdma420nz single n-channel 2. 5v specified powertrench ? mosfet fdma420nz rev b1 www.fairchildsemi.com 4 figure 7. gate charge characteri 024681012 0 1 2 3 4 5 v ds = 25v v ds = 20v v ds = 15v q g , gate charge(nc) v gs , gate to source voltage(v) stics figure 8. capacitance vs 0.1 1 10 100 1000 30 v ds , drain to source voltage (v) capacitance (pf) c rss c oss c iss f = 1mhz v gs = 0v 2000 50 drain to source voltage figure 9. forward bias 0.1 1 10 0.01 0.1 1 10 100 dc 10s 1s 100ms 10ms 1ms 100us 10us i d , drain current (a) v ds , drain to source voltage (v) single pulse t j =max rated t a = 25 o c operation in this area may be limited by r ds(on) 50 safe operating area figure 10. maximum cont inuous drain current vs ambient temperature 25 50 75 100 125 150 0 1 2 3 4 5 6 t a , ambient temperature ( o c ) i d , drain current (a) v gs = 2.5v v gs = 4.5v figure 11. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 v gs = 10v single pulse t, pulse width (s) p (pk) , peak transient power ( w ) 0.5 200 t a = 25 o c for temperatures above 25 o c derate peak current as follows: ii 25 = 150 t a ? 125 -------------------- - single pulse maximum power dissipation typical characteristics t j = 25c unless otherwise noted
fdma420nz single n-channel 2. 5v specified powertrench ? mosfet fdma420nz rev b1 www.fairchildsemi.com 5 figure 12. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a r t ja = 145 o c transient thermal response curve typical characteristics t j = 25c unless otherwise noted
fdma420nz single n-channel 2. 5v specified powertrench ? mosfet fdma420nz rev b1 www.fairchildsemi.com 6 notes: a. not fully conform to jedec registration mo-229 dated aug/2003. b. dimensions are in millimeters. c. dimensions and tolerances per asmey14.5m,1994 mlp06lreva dimensional outline and pad layout
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